OP.CP TRN.10 TO 35V 11mA 2500Vrms Transistor Inverter Inverter For Air Conditionor IGBT Gate Drive Power MOS FET Gate Drive The TOSHIBA TLP250 consists of a GaAlAs light emitting diode and a integrated photodetector. This unit is 8−lead DIP package. TLP250 is suitable for gate driving circuit of IGBT or power MOS FET. •  Input threshold current: IF=5mA(max.) •  Supply current (ICC): 11mA(max.) •  Supply voltage (VCC): 10−35V •  Output current (IO): ±1.5A (max.) •  Switching time (tpLH/tpHL): 1.5µs(max.) •  Isolation voltage: 2500Vrms(min.) •  UL recognized: UL1577, file No.E67349 •  Option (D4) type