Type Designator: 2N2222 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0.5 W Maximum Collector-Base Voltage |Vcb|: 60 V Maximum Collector-Emitter Voltage |Vce|: 30 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 0.8 A Max. Operating Junction Temperature (Tj): 175 °C Transition Frequency (ft): 250 MHz Collector Capacitance (Cc): 8 pF Forward Current Transfer Ratio (hFE), MIN: 100 **اصل و اورجینال**